Channel TypeN
Collector Current45 A
Collector to Emitter Shorted Voltage600 V
Collector to Emitter Voltage600 V
ConfigurationArray
Continuous Collector Current45 A
Dimensions55 x 31 x 12 mm
Energy Rating1.9 mJ
Gate Capacitance2.7 nF
Gate to Emitter Voltage±20 V
Height0.472" (12mm)
Length2.165" (55mm)
Maximum Operating Temperature+150 °C
Minimum Operating Temperature-40 °C
Mounting TypeThrough Hole
Number of Pins19
Package TypeT-52
PolarityN-Channel
Primary TypeSi
Product HeaderN-Channel IGBT Module
SeriesIGBT Series
Temperature Operating Range-40 to +150 °C
Transistor TypeIGBT
TypeUltrafast
Width1.22" (31mm)