Channel TypeN

Collector Current45 A

Collector to Emitter Shorted Voltage600 V

Collector to Emitter Voltage600 V

ConfigurationArray

Continuous Collector Current45 A

Dimensions55 x 31 x 12 mm

Energy Rating1.9 mJ

Gate Capacitance2.7 nF

Gate to Emitter Voltage±20 V

Height0.472" (12mm)

Length2.165" (55mm)

Maximum Operating Temperature+150 °C

Minimum Operating Temperature-40 °C

Mounting TypeThrough Hole

Number of Pins19

Package TypeT-52

PolarityN-Channel

Primary TypeSi

Product HeaderN-Channel IGBT Module

SeriesIGBT Series

Temperature Operating Range-40 to +150 °C

Transistor TypeIGBT

TypeUltrafast

Width1.22" (31mm)